AT49BV6416 Datasheet

  • AT49BV6416

  • 64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory

  • 612.00KB

  • 31页

  • ATMEL   ATMEL

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Figure 3-2.
Data Polling Algorithm
(Configuration Register = 00)
Figure 3-3.
Data Polling Algorithm
(Configuration Register = 01)
START
START
Read I/O7 - I/O0
Addr = VA
Read I/O7 - I/O0
Addr = VA
YES
I/O7 = Data?
NO
NO
NO
I/O7 = 1?
YES
NO
I/O3, I/O5 = 1?
I/O3, I/O5 = 1?
YES
Read I/O7 - I/O0
Addr = VA
YES
Program/Erase
Operation Not
Successful, Write
Product ID
Exit Command
Program/Erase
Operation
Successful,
Write Product ID
Exit Command
I/O7 = Data?
YES
NO
Program/Erase
Operation Not
Successful, Write
Product ID
Exit Command
Program/Erase
Operation
Successful,
Device in
Read Mode
Note:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is any sector
address within the sector being erased. During chip
erase, a valid address is any non-protected sector
address.
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is any sector
address within the sector being erased. During chip
erase, a valid address is any non-protected sector
address.
2. I/O7 should be rechecked even if I/O5 = 鈥?鈥?because
I/O7 may change simultaneously with I/O5.
9
AT49BV6416(T)
3451C鈥揊LASH鈥?/05

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