Addr.
Addr.
Addr.
Addr.
Addr.
Addr.
Addr.
Addr.
Addr.
Addr.
Addr.
Addr.
pletes.
BA鈥?/div>
5
xx30h
Note
6
2
nd
Cycle
3
rd
Cycle
4
th
Cycle
5
th
Cycle
6
th
Cycle
7
th
Cycle
Read/Reset
RD
1+
Read Memory Array until a new write cycle is initiated
Block Erase
BE
6
Read until Toggle stops, then read or program all data needed
from block(s) not being erased then Resume Erase.
Read Data Polling or Toggle bit until Erase completes or Erase is
suspended another time.
x15A8h
x2A54h
Any odd
word
address
9
WPR
7
Any odd
word
address
9
Read PR
X
2
xxF0h
Read Protection Register
until a new write cycle is
initiated.
CTU
1
Write cycles must be executed from Flash.
CTP
1
Write cycles must be executed from Flash.
Notes 1. Address bit A14, A15 and above are don鈥檛 care for coded address inputs.
2. X = Don鈥檛 Care.
3. WA = Write Address: address of memory location to be programmed.
4. WD = Write Data: 16-bit data to be programmed
5. Optional, additional blocks addresses must be entered within a time-out delay (96 碌s) after last write entry, time-out status can be
verified through FSB.3 value. When full command is entered, read Data Polling or Toggle bit until Erase is completed or suspended.
6. Read Data Polling or Toggle bit until Erase completes.
7. WPR = Write protection register. To protect code, bit 15 of WPR must be 鈥?鈥? To protect block N (N=0,1,...), bit N of WPR must be
鈥?鈥? Bit that are already at 鈥?鈥?in protection register must also be 鈥?鈥?in WPR, else a writing error will occurs (it is not possible to write a
鈥?鈥?in a bit already programmed at 鈥?鈥?.
8. MEM = any address inside the Flash memory space. Absolute addressing mode must be used (MOV MEM, Rn), and instruction
must be executed from Flash memory space.
9. Odd word address = 4n-2 where n = 0, 1, 2, 3..., ex. 0002h, 0006h...
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