2SK1824
TYPICAL CHARACTERISTICS (T
A
= 25 藲C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
240
100
80
60
40
20
200
160
120
80
40
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
3.0 cm
2
脳
0.64 mm
Using ceramic substrate
P
T
- Power Dissipation - mW
dT - Derating Factor - %
0
20
40
60
80
100
120
140 160
0
30
60
90
120
150
180
T
C
- Case Temperature - 藲C
TRANSFER CHARACTERISTICS
|y
fs
| - Forward Transfer Admittance - mS
300
100
I
D
- Drain Current - mA
V
DS
= 3 V
Pulsed
600
T
A
- Ambient Temperature - 藲C
FORWARD TRANSFER ADMITTANCE
vs. DRAIN CURRENT
V
DS
= 3 V
Pulsed
T
A
= 25 藲C
鈥?5 藲C
200
100
50
20
10
5
2
0.5
10
150 藲C
T
A
= 鈥?5 藲C
1.0
75 藲C
150 藲C
2.5 藲C
0.1
7.5 藲C
0.01
0.001
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1.0
3.0
10
30
100
200
V
GS
- Drain to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-State Resistance -
鈩?/div>
R
DS(on)
- Drain to Source On-State Resistance -
鈩?/div>
13
Pulsed
11
24
20
16
12
8
4
0
0.5
I
D
- Drain Current - mA
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
V
GS
= 2.5 V
Pulsed
9
I
D
= 0.1 A
7
T
A
= 150 藲C
75 藲C
25 藲C
5
鈥?5 藲C
I
D
= 10 mA
3
0
1
2
3
4
5
6
7
8
1
3
10
30
60
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - mA
3
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