IS61LV6416
IS61LV6416L
WRITE CYCLE NO. 2
(1)
(WE Controlled,
OE
= HIGH during Write Cycle)
t
WC
ADDRESS
VALID ADDRESS
ISSI
t
HA
庐
1
2
OE
CE
LOW
t
AW
t
PWE1
WE
3
4
t
LZWE
HIGH-Z
t
SA
UB, LB
t
PBW
t
HZWE
D
OUT
DATA UNDEFINED
5
t
HD
t
SD
D
IN
DATA
IN
VALID
UB_CEWR2.eps
6
7
8
t
HA
WRITE CYCLE NO. 3
(WE Controlled:
OE
is LOW During Write Cycle)
t
WC
ADDRESS
OE
CE
VALID ADDRESS
LOW
9
LOW
t
AW
t
PWE2
WE
10
t
LZWE
t
SA
UB, LB
t
PBW
t
HZWE
D
OUT
DATA UNDEFINED
HIGH-Z
11
12
UB_CEWR3.eps
t
SD
D
IN
t
HD
DATA
IN
VALID
Integrated Silicon Solution, Inc.
Rev. C
10/14/03
9