Target Spec
K4D551638F-TC
AC CHARACTERISTICS (I)
Parameter
Row cycle time
Refresh row cycle time
Row active time
RAS to CAS delay for Read
RAS to CAS delay for Write
Row precharge time
Row active to Row active
Last data in to Row precharge @Nor-
mal Precharge
Last data in to Row precharge @Auto
Precharge
Last data in to Read command
Col. address to Col. address
Mode register set cycle time
Auto precharge write recovery + Pre-
charge
Exit self refresh to read command
Power down exit time
Refresh interval time
256M GDDR SDRAM
-33
Min
15
17
10
5
3
5
3
3
3
3
1
2
8
200
3tCK
+tIS
7.8
Symbol
tRC
tRFC
tRAS
tRCDRD
tRCDWR
tRP
tRRD
tWR
tWR_A
tCDLR
tCCD
tMRD
tDAL
tXSR
tPDEX
tREF
-36
Max
Min
15
17
10
5
3
5
3
3
3
2
1
2
8
200
3tCK
+tIS
7.8
-40
Max
Min
13
15
9
4
2
4
3
3
3
2
1
2
7
200
3tCK
+tIS
7.8
-50
Max
Min
12
14
8
4
2
4
2
3
3
2
1
2
7
200
1tCK
+tIS
7.8
-60
Max
Min
10
12
7
3
2
3
2
3
3
1
1
2
6
200
1tCK
+tIS
7.8
Max
-
-
100K
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit Note
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ns
us
1
1
1
-
-
100K
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100K
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100K
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100K
-
-
-
-
-
-
-
-
-
-
-
-
-
Note : 1. For normal write operation, even numbers of Din are to be written inside DRAM
AC CHARACTERISTICS (II)
(Unit : Number of Clock)
K4D551638D-TC33
Frequency
Cas Latency
300MHz ( 3.3ns )
3
tRC
15
tRFC
17
tRAS
10
tRCDRD tRCDWR
5
3
tRP
5
tRRD
3
tDAL
8
Unit
tCK
K4D551638D-TC36
Frequency
Cas Latency
275MHz ( 3.6ns )
3
tRC
15
tRFC
17
tRAS
10
tRCDRD tRCDWR
5
3
tRP
5
tRRD
3
tDAL
8
Unit
tCK
K4D551638D-TC40
Frequency
Cas Latency
250MHz ( 4.0ns )
3
200MHz ( 5.0ns )
3
tRC
13
12
tRFC
15
14
tRAS
9
8
tRCDRD tRCDWR
4
2
4
2
tRP
4
4
tRRD
3
3
tDAL
7
7
Unit
tCK
tCK
K4D551638D-TC50
Frequency
Cas Latency
200MHz ( 5.0ns )
3
tRC
12
tRFC
14
tRAS
8
tRCDRD tRCDWR
4
2
tRP
4
tRRD
3
tDAL
7
Unit
tCK
K4D551638D-TC60
Frequency
Cas Latency
166MHz ( 6.0ns )
3
tRC
10
tRFC
12
tRAS
7
tRCDRD tRCDWR
3
2
tRP
3
tRRD
2
tDAL
6
Unit
tCK
- 14 -
Rev 1.7 (June 2004)