MC78L00A Series, NCV78L00A
8.0
VO, OUTPUT VOLTAGE (V)
MC78L05AC
V
out
= 5.0 V
T
J
= 25掳C
I
O
= 1.0 mA
4.0
I
O
= 40 mA
2.0
I
O
= 100 mA
V I 鈭扸 O , INPUT/OUTPUT DIFFERENTIAL VOLTAGE (V)
2.5
2.0
1.5
1.0
0.5
0
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (掳C)
125
I
O
= 40 mA
I
O
= 1.0 mA
Dropout of Regulation is
defined as when
V
O
= 2% of V
O
I
O
= 70 mA
6.0
0
0
2.0
4.0
6.0
V
I
, INPUT VOLTAGE (V)
8.0
10
Figure 3. Dropout Characteristics
Figure 4. Dropout Voltage versus
Junction Temperature
4.2
I IB , INPUT BIAS CURRENT (mA)
4.0
3.8
3.6
3.4
3.2
3.0
0
0
25
50
75
100
T
A
, AMBIENT TEMPERATURE (掳C)
125
MC78L05AC
V
I
= 10 V
V
O
= 5.0 V
I
O
= 40 mA
I IB , INPUT BIAS CURRENT (mA)
5.0
4.0
3.0
2.0
1.0
0
0
5.0
10
15
20
25
V
I
, INPUT VOLTAGE (V)
30
35
40
MC78L05AC
V
out
= 5.0 V
I
O
= 40 mA
T
J
= 25掳C
Figure 5. Input Bias Current versus
Ambient Temperature
Figure 6. Input Bias Current
versus Input Voltage
R
胃
JA, THERMAL RESISTANCE JUNCTION-TO-AIR (
掳
C/W)
PD , POWER DISSIPATION (mW)
150
130
P
D(max)
for T
A
= 50掳C
2.8
2.4
No Heatsink
1000
90
70
50
30
0
10
R
qJA
20
100
R
qJA
= 200掳C/W
P
D(max)
to 25掳C = 625 mW
10
25
50
75
100
125
T
A
, AMBIENT TEMPERATURE (掳C)
150
L, LENGTH OF COPPER (mm)
Figure 7. Maximum Average Power Dissipation versus
Ambient Temperature 鈭?TO鈭?2 Type Package
Figure 8. SOIC鈭? Thermal Resistance and Maximum
Power Dissipation versus P.C.B. Copper Length
http://onsemi.com
7
脦脦脦 脦
脦 脦
脦脦脦脦脦脦脦
脦 脦脦脦
脦脦脦脦脦脦脦
L
2.0 oz.
Copper
L
3.0 mm
30
40
110
Graph represents symmetrical layout
2.0
1.6
1.2
0.8
0.4
50
PD, MAXIMUM POWER DISSIPATION (W)
10,000
170
3.2