HYB25D256[16/40/80]0C[E/C/F/T](L)
256 Mbit Double-Data-Rate SDRAM
Electrical Characteristics
4.2
Normal Strength Pull-down and Pull-up Characteristics
1. The nominal pull-down
V
-
I
curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the
inner bounding lines of the
V
-
I
curve.
2. The full variation in driver pull-down current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the
V
-
I
curve.
3. The nominal pull-up
V
-
I
curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the inner
bounding lines of the
V
-
I
curve.
4. The full variation in driver pull-up current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the
V
-
I
curve.
5. The full variation in the ratio of the maximum to minimum pull-up and pull-down current does not exceed 1.7,
for device drain to source voltages from 0.1 to 1.0.
6. The full variation in the ratio of the nominal pull-up to pull-down current should be unity
卤10%,
for device drain
to source voltages from 0.1 to 1.0 V.
140
120
Maximum
Nominal High
Nominal Low
Minimum
I
OUT
(mA)
100
80
60
40
20
0
0
0.5
1
1.5
2
2.5
V
DDQ
-
V
OUT
(V)
Figure 34
Normal Strength Pull-down Characteristics
0
-20
-40
-60
-80
-100
-120
-140
-160
0
0.5
1
Nominal High
Maximum
Minimum
Nominal Low
I
OUT
(mA)
V
DDQ
-
V
OUT
(V)
1.5
2
2.5
Figure 35
Normal Strength Pull-up Characteristics
Data Sheet
64
Rev. 1.6, 2004-12