HYB25D256[16/40/80]0C[E/C/F/T](L)
256 Mbit Double-Data-Rate SDRAM
Electrical Characteristics
4.3
Weak Strength Pull-down and Pull-up Characteristics
1. The weak pull-down
V
-
I
curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the inner
bounding lines of the
V
-
I
curve.
2. The weak pull-up
V
-
I
curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the inner
bounding lines of the
V
-
I
curve.
3. The full variation in driver pull-up current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the
V
-
I
curve.
4. The full variation in the ratio of the maximum to minimum pull-up and pull-down current does not exceed 1.7,
for device drain to source voltages from 0.1 to 1.0.
5. The full variation in the ratio of the nominal pull-up to pull-down current should be unity
卤10%,
for device drain
to source voltages from 0.1 to 1.0 V.
8
0
7
0
6
0
Mi u
am
x m
Tp ah h
yi l i
c g
Tp al w
yi l o
c
Mi u
i m
n m
I u[ A
ot m
]
5
0
4
0
3
0
2
0
1
0
0
0
,
0
0
,
5
1
,
0
1
,
5
2
,
0
2
,
5
Vu[ ]
ot V
Figure 36
Weak Strength Pull-down Characteristics
0
,
0
0
,
0
-0
1,
0
-0
2,
0
0
,
5
1
,
0
1
,
5
2
,
0
2
,
5
Mi u
i m
n m
I u[ ]
ot V
-0
3,
0
-0
4,
0
-0
5,
0
-0
6,
0
-0
7,
0
-0
8,
0
Tp al w
yi l o
c
Tp ah h
yi l i
c g
Mi u
am
x m
Vu[ ]
ot V
Figure 37
Weak Strength Pull-up Characteristics
Data Sheet
66
Rev. 1.6, 2004-12