HYB25D256[16/40/80]0C[E/C/F/T](L)
256 Mbit Double-Data-Rate SDRAM
Functional Description
Maximum DQSS
T1
CK
CK
Command
Address
Write
BA a, COL b
T2
T3
T4
NOP
NOP
NOP
t
DQSS
(max)
DQS
DQ
DM
Dla-b
Minimum DQSS
T1
CK
CK
Command
Address
Write
BA a, COL b
NOP
NOP
NOP
T2
T3
T4
t
DQSS
(min)
DQS
DQ
DM
Dla-b
DI a-b = data in for bank a, column b.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
A non-interrupted burst is shown.
A10 is Low with the Write command (Auto Precharge is disabled).
Don鈥檛 Care
Figure 18
Write Burst (Burst Length = 4)
Data Sheet
43
Rev. 1.6, 2004-12