5.11
t
CH
t
CK
t
CL
t
RP
t
WR
Figure 49
Data Sheet
t
DAL
VALID
VALID
VALID
NOP
NOP
NOP
NOP
NOP
NOP
NOP
ACT
t
IH
RA
t
IH
RA
t
IH
CK
CK
t
IH
t
IS
CKE
t
IH
t
IS
Command
NOP
Write
t
IS
A0-A9, A11, A12
COL n
t
IS
A10
EN AP
Write: With Auto Precharge Command
Figure 49
shows the timing diagram for Write with Auto Precharge.
Write with Auto Precharge (Burst Length = 4)
87
BA x
t
DSH
t
DQSH
t
DQSL
t
WPST
t
DQSS
DIn
t
WPRE
t
IS
BA
BA0, BA1
t
WPRES
DQS
DQ
DM
t
DQSS
= min.
HYB25D256[16/40/80]0C[E/C/F/T](L)
256 Mbit Double-Data-Rate SDRAM
Timing Diagrams
Rev. 1.6, 2004-12
DIn = Data in for column n.
3 subsequent elements of data in are applied in the programmed order following DIn.
EN AP = Enable Auto Precharge.
ACT = Active; RA = Row address; BA = Bank address.
NOP commands are shown for ease of illustration; other valid commands may be possible at these times.
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