HYB25D256800CL-6 Datasheet

  • HYB25D256800CL-6

  • 256 Mbit Double Data Rate SDRAM

  • 3260.54KB

  • 94页

  • INFINEON   INFINEON

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256 Mbit Double-Data-Rate SDRAM
DDR SDRAM
HYB25D256[40/80/16]0CE(L)
HYB25D256[40/80/16]0C[T/C/F]
1
1.1
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Overview
Features
Double data rate architecture: two data transfers per clock cycle
Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the
receiver
DQS is edge-aligned with data for reads and is center-aligned with data for writes
Differential clock inputs (CK and CK)
Four internal banks for concurrent operation
Data mask (DM) for write data
DLL aligns DQ and DQS transitions with CK transitions
Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS
Burst Lengths: 2, 4, or 8
CAS Latency: 1.5 (DDR200 only), 2, 2.5, 3
Auto Precharge option for each burst access
Auto Refresh and Self Refresh Modes
RAS-lockout supported
t
RAP
=
t
RCD
7.8
碌s
Maximum Average Periodic Refresh Interval
2.5 V (SSTL_2 compatible) I/O
V
DDQ
= 2.5 V
0.2 V (DDR200, DDR266, DDR333);
V
DDQ
= 2.6 V
0.1 V (DDR400)
V
DD
= 2.5 V
0.2 V (DDR200, DDR266, DDR333);
V
DD
= 2.6 V
0.1 V (DDR400)
P-TFBGA-60-12 package with 3 depopulated rows (8
12 mm
2
)
P-TSOPII-66 package
Lead- and halogene-free = green product
Performance
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Component
Module
@CL3
@CL2.5
@CL2
DDR400B
PC3200-3033
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DDR333
PC2700鈥?533
166
166
133
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DDR266A
PC2100-2033
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143
133
Unit
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MHz
MHz
MHz
Table 1
Part Number Speed Code
Speed Grade
max. Clock Frequency
f
CK3
200
f
CK2.5
166
f
CK2
133
Data Sheet
9
Rev. 1.6, 2004-12

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