2SK3573
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
350
Pulsed
300
V
GS
= 10 V
FORWARD TRANSFER CHARACTERISTICS
1000
V
DS
= 10 V
Pulsed
I
D
- Drain Current - A
250
200
150
100
50
0
0
0.5
1
1.5
4.5 V
I
D
- Drain Current - A
100
10
1
T
ch
= 150掳C
75掳C
25掳C
鈭?5掳C
0.1
0.01
0
1
2
3
4
5
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
100
V
DS
= 10 V
Pulsed
V
GS(off)
- Gate Cut-off Voltage - V
2.5
2
1.5
1
0.5
0
-50
0
50
V
DS
= 10 V
I
D
= 1 mA
10
T
ch
=
鈭?5掳C
25掳C
75掳C
150掳C
1
0.1
0.1
1
10
100
100
150
T
ch
- Channel Temperature -
掳C
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - m鈩?/div>
10
Pulsed
8
V
GS
= 4.5 V
R
DS(on)
- Drain to Source On-state Resistance - m鈩?/div>
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
Pulsed
8
6
6
4
10 V
4
I
D
= 42 A
2
2
0
1
10
100
1000
0
0
5
10
15
20
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
4
Data Sheet D16259EJ2V0DS
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