- Drain to Source On-state Resistance - m鈩?/div>
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
7
6
5
4
3
10 V
2
1
0
-50
0
50
100
150
I
D
= 42 A
Pulsed
V
GS
= 4.5 V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
C
iss
, C
oss
, C
rss
- Capacitance - pF
C
iss
1000
C
oss
C
rss
V
GS
= 0 V
f = 1 MHz
100
0.1
1
10
100
T
ch
- Channel Temperature - 掳C
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
20
10
V
DD
= 16 V
10 V
t
d(off)
100
t
d(on)
10
t
r
t
f
16
8
12
V
GS
8
6
4
4
V
DS
0
0
20
40
I
D
= 83 A
2
1
0.1
1
10
100
0
60
80
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
100
V
GS
= 10 V
10
0V
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
t
rr
- Reverse Recovery Time - ns
I
F
- Diode Forward Current - A
100
1
10
0.1
di/dt = 100 A/碌s
V
GS
= 0 V
1
0.1
1
10
100
0.01
0
0.5
1
1.5
V
F(S-D)
- Source to Drain Voltage - V
I
D
- Drain Current - A
Data Sheet D16259EJ2V0DS
5
V
GS
- Gate to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
DD
= 10 V
V
GS
= 10 V
R
G
= 10
鈩?/div>
V
DS
- Drain to Source Voltage - V
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