Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA208S series B
BTA208M series B
3
2.5
2
1.5
IGT(Tj)
IGT(25 C)
BTA212
T2+ G+
T2+ G-
T2- G-
25
IT / A
Tj = 125 C
Tj = 25 C
BT137
20
typ
Vo = 1.264 V
Rs = 0.0378 Ohms
max
15
10
1
0.5
0
-50
5
0
50
Tj / C
100
150
0
0
0.5
1
1.5
VT / V
2
2.5
3
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25藲C), versus junction temperature T
j
.
IL(Tj)
IL(25 C)
Fig.10. Typical and maximum on-state characteristic.
3
2.5
TRIAC
10
Zth j-mb (K/W)
BT137
unidirectional
1
bidirectional
2
1.5
1
0.5
0
-50
0.01
10us
0.1ms
1ms
10ms
tp / s
0.1
P
D
tp
t
0
50
Tj / C
100
150
0.1s
1s
10s
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25藲C),
versus junction temperature T
j
.
IH(Tj)
IH(25C)
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
3
2.5
2
1.5
1
0.5
TRIAC
1000
dIcom/dt (A/ms)
BTA208
100
10
0
-50
0
50
Tj / C
100
150
1
20
40
60
80
Tj / C
100
120
140
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25藲C),
versus junction temperature T
j
.
Fig.12. Typical, critical rate of change of commutating
current, dI
com
/dt versus junction temperature.
September 1997
4
Rev 1.200