IRFD220 Datasheet

  • IRFD220

  • 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET

  • 51.94KB

  • Intersil

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IRFD220
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Speci铿乪d
IRFD220
200
200
0.8
6.4
卤20
1.0
0.008
85
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/
o
C
mJ
o
C
o
C
o
C
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k鈩? (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor (See Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speci铿乧ation is not implied.
NOTE:
1. T
J
= 25
o
C to T
J
= 125
o
C.
Electrical Speci铿乧ations
PARAMETER
T
C
= 25
o
C, Unless Otherwise Speci铿乪d
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 250碌A, V
GS
= 0V (Figure 9)
V
GS
= V
DS
, I
D
= 250碌A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
MIN
200
2.0
-
-
0.8
-
-
0.5
-
-
-
-
V
GS
= 10V, I
D
鈮?/div>
0.8A, V
DS
= 0.8 x Rated BV
DSS
I
G(REF)
= 1.5mA, (Figure 13) Gate Charge is
Essentially Independent of Operating Temperature
-
-
-
V
GS
= 0V, V
DS
= 25V, f = 1MHz (Figure 10)
-
-
-
Measured from the Drain
Lead, 2mm (0.08in) from
Package to Center of Die
Measured from the Source
Lead, 2mm (0.08in) from
Header to Source Bonding
Pad
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
L
D
G
L
S
S
TYP
-
-
-
-
-
-
0.5
1.1
20
30
50
30
11
6.0
5.0
450
150
40
4.0
MAX
-
4.0
25
250
-
卤100
0.8
-
40
60
100
60
15
-
-
-
-
-
-
UNITS
V
V
碌A
碌A
A
nA
鈩?/div>
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain 鈥淢iller鈥?Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
I
D(ON)
I
GSS
r
DS(ON)
gfs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V (Figure 6)
V
GS
=
卤20V
I
D
= 0.4A, V
GS
= 10V (Figures 7, 8)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, I
D
= 0.4A (Figure 11)
V
DD
=
0.5 x Rated BV
DSS
, I
D
鈮?/div>
0.8A,
R
G
= 9.1鈩? R
L
= 74鈩? V
GS
= 10V,
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-
Internal Source Inductance
L
S
-
6.0
-
nH
Thermal Resistance Junction to Ambient
R
胃JA
Free Air Operation
-
-
120
o
C/W
4-288

IRFD220 产品属性

  • IRFD220

  • 2,500

  • 分离式半导体产品

  • FET - 单

  • -

  • MOSFET N 通道,金属氧化物

  • 标准型

  • 200V

  • 800mA

  • 800 毫欧 @ 480mA,10V

  • 4V @ 250µA

  • 14nC @ 10V

  • 260pF @ 25V

  • 1W

  • 通孔

  • 4-DIP(0.300",7.62mm)

  • 4-DIP,Hexdip,HVMDIP

  • 管件

  • *IRFD220

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