IRFD220 Datasheet

  • IRFD220

  • 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET

  • 51.94KB

  • Intersil

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IRFD220
Typical Performance Curves
5
V
GS
= 10V
V
GS
= 8V
I
D
, DRAIN CURRENT (A)
4
V
GS
= 6V
V
GS
= 5V
3
Unless Otherwise Speci铿乪d
(Continued)
10
PULSE DURATION = 80碌s
DUTY CYCLE = 0.5% MAX
V
DS
> I
D(ON)
x r
DS(ON)MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
I
D(ON)
, ON-STATE DRAIN CURRENT (A)
8
6
2
PULSE DURATION = 80碌s
DUTY CYCLE = 0.5% MAX
4
1
V
GS
= 4V
0
0
2
4
6
8
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
2
0
0
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
FIGURE 5. SATURATION CHARACTERISTICS
FIGURE 6. TRANSFER CHARACTERISTICS
1.0
r
DS(ON)
, ON-STATE RESISTANCE (鈩?
NORMALIZED ON RESISTANCE
PULSE DURATION = 80碌s
DUTY CYCLE = 0.5% MAX
0.8
V
GS
= 20V
0.6
V
GS
= 10V
0.4
2.2
V
GS
= 10V, I
D
= 0.4A
1.8
1.4
1.0
0.2
0.6
0
0.2
0
2
6
4
I
D
, DRAIN CURRENT (A)
8
10
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1000
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
1.25
I
D
= 250碌A
800
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
1.15
C, CAPACITANCE (pF)
600
C
ISS
400
C
OSS
C
RSS
1.05
0.95
0.85
200
0.75
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
0
0
40
30
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
50
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
4-290

IRFD220 产品属性

  • IRFD220

  • 2,500

  • 分离式半导体产品

  • FET - 单

  • -

  • MOSFET N 通道,金属氧化物

  • 标准型

  • 200V

  • 800mA

  • 800 毫欧 @ 480mA,10V

  • 4V @ 250µA

  • 14nC @ 10V

  • 260pF @ 25V

  • 1W

  • 通孔

  • 4-DIP(0.300",7.62mm)

  • 4-DIP,Hexdip,HVMDIP

  • 管件

  • *IRFD220

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