2SK3355
ELECTRICAL CHARACTERISTICS (T
A
= 25 掳C)
CHARACTERISTICS
Drain to Source On-state Resistance
SYMBOL
R
DS(on)1
R
DS(on)2
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS(off)
| y
fs
|
I
DSS
I
GSS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
I
F
= 83 A, V
GS
= 0 V
I
F
= 83 A, V
GS
= 0 V,
di/dt = 100 A/
碌
s
I
D
= 83 A , V
DD
= 48 V, V
GS
= 10 V
I
D
= 42 A, V
GS(on)
= 10 V, V
DD
= 30 V,
R
G
= 10
鈩?/div>
TEST CONDITIONS
V
GS
= 10 V, I
D
= 42 A
V
GS
= 4.0 V, I
D
= 42 A
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 42 A
V
DS
= 60 V, V
GS
= 0 V
V
GS
= 卤20 V, V
DS
= 0 V
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
9800
1500
630
130
1450
510
510
170
28
46
0.99
64
130
1.5
39
MIN.
TYP.
4.6
6.1
2.0
77
10
卤10
MAX.
5.8
8.8
2.5
UNIT
m鈩?/div>
m鈩?/div>
V
S
碌
A
碌
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
鈩?/div>
PG.
V
GS
= 20
鈫?/div>
0 V
BV
DSS
V
DS
V
GS
0
50
鈩?/div>
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
R
L
PG.
R
G
V
DD
I
D
90 %
90 %
V
GS
V
GS
Wave Form
0
10 %
V
GS
(on)
90 %
I
AS
I
D
V
DD
I
D
I
D
Wave Form
0 10 %
10 %
蟿
蟿
= 1
碌
s
Duty Cycle
鈮?/div>
1 %
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
50
鈩?/div>
R
L
V
DD
PG.
2
Data Sheet D14132EJ2V0DS00
2SK3355 PDF文件相关型号
2SK3355-ZJ
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TRANSISTOR | MOSFET | N-CHANNEL | 120V V(BR)DSS | 10A I(D) |...
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