- Drain to Source On-state Resistance - m鈩?/div>
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
12
10
8
6
4
2
0
鈭?0
0
50
100
I
D
= 42 A
150
V
GS
= 4.0 V
10 V
Pulsed
I
SD
- Diode Forward Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
V
GS
= 10 V
100
V
GS
= 0 V
10
1
0.1
0
0.5
1.0
1.5
T
ch
- Channel Temperature -
藲C
V
SD
- Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100000
C
iss
, C
oss
, C
rss
- Capacitance - pF
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
SWITCHING CHARACTERISTICS
10000
t
r
1000
t
d(off)
t
f
100
t
d(on)
V
GS
= 0 V
f = 1 MHz
10000
C
iss
1 000
C
oss
C
rss
100
0.1
1
10
100
10
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
t
rr
- Reverse Recovery Time - ns
V
DS
- Drain to Source Voltage - V
di/dt = 100 A/
碌
s
V
GS
= 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
V
GS
80
60
V
DD
= 48 V
30 V
12 V
8
10
V
GS
- Gate to Source Voltage - V
100
6
4
40
V
DS
10
20
0
0
2
I
D
= 83 A
100 120 140 160
1
0.1
1.0
10
100
20
40
60
80
I
F
- Drain Current - A
Q
G
- Gate Charge - nC
Data Sheet D14132EJ2V0DS00
5