您的位置：维库电子市场网 > Datasheet > K9K4G08U0M

K9K4G08U0M Datasheet

  • K9K4G08U0M

  • Samsung semiconductor [512M x 8 Bit / 256M x 16 Bit NAND Fl...

  • 600.21KB

  • SAMSUNG

阅览下载 纠错 0

扫码查看芯片数据手册

上传产品规格书

PDF预览

K9W8G08U1M
K9K4G08Q0M
K9K4G08U0M
K9K4G16Q0M
K9K4G16U0M
FLASH MEMORY
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
PRODUCT LIST
Part Number
K9K4G08Q0M-Y
K9K4G16Q0M-Y
K9XXG08UXM-Y
K9K4G16U0M-Y
2.7 ~ 3.6V
Vcc Range
1.70 ~ 1.95V
Organization
X8
X16
X8
X16
TSOP1
PKG Type
FEATURES
鈥?/div>
Voltage Supply
-1.8V device(K9K4GXXQ0M): 1.70V~1.95V
-3.3V device(K9XXGXXUXM): 2.7 V ~3.6 V
鈥?/div>
Organization
- Memory Cell Array
-X8 device(K9XXG08XXM) : (512M + 16,384K)bit x 8bit
-X16 device(K9XXG16XXM) : (256M + 8,192K)bit x 16bit
- Data Register
-X8 device(K9XXG08XXM): (2K + 64)bit x8bit
-X16 device(K9XXG16XXM): (1K + 32)bit x16bit
- Cache Register
-X8 device(K9XXG08XXM) : (2K + 64)bit x8bit
-X16 device(K9XXG16XXM) : (1K + 32)bit x16bit
鈥?/div>
Automatic Program and Erase
- Page Program
-X8 device(K9XXG08XXM) : (2K + 64)Byte
-X16 device(K9XXG16XXM) : (1K + 32)Word
- Block Erase
-X8 device(K9XXG08XXM) : (128K + 4K)Byte
-X16 device(K9XXG16XXM) : (64K + 2K)Word
鈥?/div>
Page Read Operation
- Page Size
- X8 device(K9XXG08XXM) : 2K-Byte
- X16 device(K9XXG16XXM) : 1K-Word
- Random Read : 25碌s(Max.)
- Serial Access : 50ns(Min.)
30ns(Min., K9XXG08UXM only)
鈥?/div>
Fast Write Cycle Time
- Program time : 300碌s(Typ.)
- Block Erase Time : 2ms(Typ.)
鈥?/div>
Command/Address/Data Multiplexed I/O Port
鈥?/div>
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
鈥?/div>
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
鈥?/div>
Command Register Operation
鈥?/div>
Cache Program Operation for High Performance Program
鈥?/div>
Power-On Auto-Read Operation
鈥?/div>
Intelligent Copy-Back Operation
鈥?/div>
Unique ID for Copyright Protection
鈥?/div>
Package :
- K9XXGXXXXM-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9W8G08U1M-YCB0/YIB0 : Two K9K4G08U0M stacked.
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9XXGXXXXM-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9W8G08U1M-PCB0/PIB0 : Two K9K4G08U0M stacked.
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
GENERAL DESCRIPTION
Offered in 512Mx8bit or 256Mx16bit, the K9XXGXXXXM is 4G bit with spare 128M bit capacity. Its NAND cell provides the most
cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 300碌s on the 2112-
byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device)
or 64K-word(X16 device) block. Data in the data page can be read out at 50ns cycle time per byte(30ns, only X8 3.3v device) or
word(X16 device). The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write
controller automates all program and erase functions including pulse repetition, where required, and internal verification and margin-
ing of data. Even the write-intensive systems can take advantage of the K9XXGXXXXM鈥瞫 extended reliability of 100K program/erase
cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9XXGXXXXM is an optimum solution for
large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. An ultra
high density solution having two 4Gb stacked with two chip selects is also available in standard TSOPI package.
2

K9K4G08U0M相关型号PDF文件下载

您可能感兴趣的PDF文件资料

热门IC型号推荐

©2024 维库电子市场网（www.dzsc.com）　备案号：浙B2-20050339-1 经营许可证：浙B2-20210386版权声明
买家服务热线：0571-85317607 | 买家服务部QQ： QQ:1609526468
卖家服务热线：0571-85317607 | 卖家服务部QQ： QQ:331652727

扫码下载APP，
一键连接广大的电子世界。

在线人工客服

买家服务：
卖家服务：

0571-85317607

客服在线时间周一至周五
9:00-17:30

关注官方微信号，
第一时间获取资讯。

建议反馈
返回顶部

建议反馈

联系人：

联系方式：

按住滑块，拖拽到最右边
>>
感谢您向阿库提出的宝贵意见，您的参与是维库提升服务的动力！意见一经采纳，将有感恩红包奉上哦！

PDF纠错X

投诉电话：0571-85317607 投诉QQ：

如选匿名将无法为您反馈投诉结果，建议实名投诉！