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K9K4G08U0M Datasheet

IC型号：
K9K4G08U0M
PDF描述：
Samsung semiconductor [512M x 8 Bit / 256M x 16 Bit NAND Fl...
文件大小：
600.21KB
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FLASH MEMORY

Data Protection & Power up sequence

The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector

disables all functions whenever Vcc is below about 1.1V(1.8V device) or 2V(3.3V device). WP pin provides hardware protection and

is recommended to be kept at V

IL

during power-up and power-down. A recovery time of minimum 10碌s is required before internal cir-

cuit gets ready for any command sequences as shown in Figure 18. The two step command sequence for program/erase provides

additional software protection.

Figure 18. AC Waveforms for Power Transition

1.8V device : ~ 1.5V

3.3V device : ~ 2.5V

V

CC

High

鈮?/div>

1.8V device : ~ 1.5V

3.3V device : ~ 2.5V

WP

WE

38

鈮?/div>

10碌s

鈮?/div>

鈮?/div>

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K9K4G08Q0M

英文版

512M x 8 Bit / 256M x 16 Bit NAND Flash Memory

K9K4G08Q0M
K9K4G08Q0M

英文版

512M x 8 Bit / 256M x 16 Bit NAND Flash Memory

SAMSUNG [S...

K9K4G08Q0M
K9K4G08U0M

英文版

Samsung semiconductor [512M x 8 Bit / 256M x 16 Bit NAND Fl...

K9K4G08U0M
K9K4G08U1M

英文版

256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memor...

K9K4G08U1M
K9K4G08U1M

英文版

256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memor...

SAMSUNG [Samsun...

K9K4G08U1M
K9K4G16Q0M

英文版

512M x 8 Bit / 256M x 16 Bit NAND Flash Memory

K9K4G16Q0M
K9K4G16Q0M

英文版

512M x 8 Bit / 256M x 16 Bit NAND Flash Memory

SAMSUNG [S...

K9K4G16Q0M
K9K4G16U0M

英文版

512M x 8 Bit / 256M x 16 Bit NAND Flash Memory

K9K4G16U0M
K9K4G16U0M

英文版

512M x 8 Bit / 256M x 16 Bit NAND Flash Memory

SAMSUNG [S...

K9K4G16U0M

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