MSC8101 Datasheet

  • MSC8101

  • Networking Digital Signal Processor

  • 1873.07KB

  • Motorola

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DC Electrical Characteristics
2.4 DC Electrical Characteristics
This section describes the DC electrical characteristics for the MSC8101. The measurements in
Table 2-4
assume
the following system conditions:
鈥?T
J
= 0 鈥?100 掳C
鈥?/div>
V
DD
= 1.6 V 卤 5% V
DC
鈥?/div>
V
DDH
= 3.3 V 卤 5% V
DC
鈥?/div>
GND
= 0 V
DC
Note:
The leakage current is measured for nominal
V
DDH
and
V
DD
or both
V
DDH
and
V
DD
must vary in the same
direction (for example, both
V
DDH
and
V
DD
vary by 卤 5 percent).
Table 2-4.
Characteristic
Input high voltage, all inputs except CLKIN
Input low voltage
CLKIN input high voltage
CLKIN input low voltage
1
Input leakage current, V
IN
= V
DDH
Tri-state (high impedance off state) leakage current,
V
IN
= V
DDH
Signal low input current
2
, V
IL
= 0.4 V
Signal high input current
2
, V
IH
= 2.0 V
Output high voltage, I
OH
= 鈥? mA, except open drain pins
Output low voltage, I
OL
= 3.2 mA
Notes:
1.
2.
DC Electrical Characteristics
Symbol
V
IH
V
IL
V
IHC
V
ILC
I
IN
I
OZ
I
L
I
H
V
OH
V
OL
Min
2.0
GND
2.5
GND
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
2.4
鈥?/div>
Max
3.465
0.8
3.465
0.8
10
10
鈥?.0
4.0
鈥?/div>
0.4
Unit
V
V
V
V
碌A
碌A
mA
mA
V
V
The optimum CLKIN duty cycle is obtained when: V
ILC
= V
DDH
鈥?V
IHC
.
Not tested. Guaranteed by design.
Table 2-5.
Characteristic
Core power dissipation at 300 MHz
CPM power dissipation at 200 MHz
SIU power dissipation at 100 MHz
Core leakage power
CPM leakage power
SIU leakage power
Typical Power Dissipation
Symbol
P
CORE
P
CPM
P
SIU
P
LCO
P
LCP
P
LSI
Typical
450
320
80
3
6
2
Unit
mW
mW
mW
mW
mW
mW
MSC8101 Technical Data, Rev. 16
Freescale Semiconductor
2-3

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